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Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

✍ Scribed by Marko J. Tadjer; Robert E. Stahlbush; Karl D. Hobart; Patrick J. McMarr; Hap L. Hughes; Eugene A. Imhoff; Fritz J. Kub; Sarah K. Haney; Anant Agarwal

Book ID: 107455751
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 644 KB
Volume: 39
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-009-1058-y

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