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Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

✍ Scribed by T.E. Rudenko; H.Ö. Ólafsson; E.Ö. Sveinbjörnsson; I.P. Osiyuk; I.P. Tyagulski


Book ID
108207321
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
233 KB
Volume
72
Category
Article
ISSN
0167-9317

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