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Origin of the stokes shift in semiconductor quantum wells

✍ Scribed by W. E. Hagston; P. Harrison; T. Stirner


Book ID
111997778
Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
450 KB
Volume
3
Category
Article
ISSN
1616-301X

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The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxa