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The origin of the transverse relaxation time in optically excited semiconductor quantum wells

✍ Scribed by Hai-Chao Zhang; Wei-Zhu Lin; Yu-Zhu Wang

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
453 KB
Volume
245
Category
Article
ISSN
0030-4018

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✦ Synopsis

The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate C cc on the carrier density N is determined to be C cc = Constant AE N 1/2 , which is used to explain the experimental results and provides a promising physical picture.

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