High-Excitation Effects in the Optical Properties of δ-Doped ZnSe Quantum Wells
✍ Scribed by J. Puls; G.V. Mikhailov; S. Schwertfeger; D.R. Yakovlev; F. Henneberger; W. Faschinger
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 156 KB
- Volume
- 227
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well
The electronic structure of a d-doped quantum well of B in Si is studied at room temperature in the case of high impurity concentration. The calculation is carried out self-consistently in the framework of the Hartree approximation. A model with three independent hole bands is considered. The energy