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Dual Contribution to the Stokes Shift in InGaN–GaN Quantum Wells

✍ Scribed by T.J. Ochalski; B. Gil; P. Bigenwald; M. Bugajski; A. Wojcik; P. Lefebvre; T. Taliercio; N. Grandjean; J. Massies

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
115 KB
Volume
228
Category
Article
ISSN
0370-1972

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The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well