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Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface

โœ Scribed by Y. Enta; T. Horie; N. Miyamoto; Y. Takakuwa; H. Sakamoto; H. Kato

Book ID
116066938
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
388 KB
Volume
313
Category
Article
ISSN
0039-6028

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โœ V. Milman ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 172 KB ๐Ÿ‘ 2 views

Diffusion of a Si adatom over the reconstructed Si 100 surface with a single-height step on it is studied using the pseudopotential total energy method. The S rebonded step is B shown to act as a good sink for adatoms descending onto the lower ledge. This is due to the presence of deep traps on the