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Origin of electron accumulation at wurtzite InN surfaces

✍ Scribed by Mahboob, I.; Veal, T. D.; Piper, L. F. J.; McConville, C. F.; Lu, Hai; Schaff, W. J.; Furthmüller, J.; Bechstedt, F.


Book ID
121505181
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
52 KB
Volume
69
Category
Article
ISSN
1098-0121

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## Abstract Electron tunnelling spectroscopy is used to investigate the quantized electron accumulation at the surfaces of wurtzite InN with different doping levels. The tunnelling spectra of InN‐oxide‐tip junctions recorded in air at room temperature exhibit a ∼0.6 V plateau, corresponding to the