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Intrinsic Electron Accumulation at Clean InN Surfaces

✍ Scribed by Mahboob, I.; Veal, T. D.; McConville, C. F.; Lu, H.; Schaff, W. J.

Book ID
120295202
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
295 KB
Volume
92
Category
Article
ISSN
0031-9007

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πŸ“œ SIMILAR VOLUMES

Doping-dependence of subband energies in
Doping-dependence of subband energies in quantized electron accumulation at InN surfaces
✍ Veal, T. D. ;Piper, L. F. J. ;Phillips, M. R. ;Zareie, M. H. ;Lu, Hai ;Schaff, W πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 452 KB

## Abstract Electron tunnelling spectroscopy is used to investigate the quantized electron accumulation at the surfaces of wurtzite InN with different doping levels. The tunnelling spectra of InN‐oxide‐tip junctions recorded in air at room temperature exhibit a ∼0.6 V plateau, corresponding to the