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Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers

✍ Scribed by Mohamed, Mohd Ambri; Lam, Pham Tien; Otsuka, N.


Book ID
120497782
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
629 KB
Volume
378
Category
Article
ISSN
0022-0248

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