Origin of compressive strain and phase transition characteristics of thin BaTiO3 film grown on LaNiO3/Si substrate

✍ Scribed by Qiao, Liang ;Bi, Xiaofang

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 485 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026271

✦ Synopsis

Abstract

BaTiO~3~ (BTO) thin films of 100 nm were grown on Si substrates buffered with LaNiO~3~ (LNO) layers with various thicknesses. X‐ray diffraction and strain analysis demonstrate that the BTO film grown on the LNO of 600 nm is in an in‐plane compressive strain state. The remnant polarization of 10.2 µC/cm^2^ obtained for the film also indicates the presence of the compressive strain state. However, dielectric measurement reveals a phase transition temperature of 100 °C, lower than the typical value of 120 °C. The result is discussed in terms of the stiffening of soft mode in the center of Brillouin zone. The corresponding domain configuration is also investigated.