Structure and electrical properties of Pb(Zr0.25Ti0.75)O3thin films on LaNiO3—Coated thermally oxidized Si substrates
✍ Scribed by Dinghua Bao; Kaibin Ruan; Tong Liang
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 628 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0928-0707
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Pb(Zr, Ti)O 3 (PZT) thin films with Zr/Ti ratio of 92/8 and doped with up to 4 at.% Nb were deposited by sol-gel on Pt coated Si substrates. The scope was to investigate the influence of Nb additive on the structural, optical and electrical properties of Zr-rich PZT phase. It was found that a residu
Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) thin films grown on Pt-coated Si substrates were prepared by a sol-gel process. Crystalline structure characterisation and optical constants (refractive index n, extinction coefficient k) and bandgaps E g of PZT thin films annealed at 550, 600 and 650 • C were obtained