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Orientational dependence of hole effective masses in quantum-well laser structures

✍ Scribed by M. Kucharczyk; M.S. Wartak

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
127 KB
Volume
24
Category
Article
ISSN
0749-6036

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✦ Synopsis

Valence energy subbands and hole effective masses for quantum-well structures have been calculated, using GaInAs-InGaAsP and GaAs-AlGaAs material systems as an example. A Luttinger-Kohn 4 Γ— 4 hamiltonian with heavy-hole and light-hole band mixing was used in the calculations. Systematic numerical results have been presented for a range of growth directions, material parameters and quantum well widths.

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