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Orientation dependence of surface states in native oxide-GaAs MOS structures

✍ Scribed by A. M. Narsale; R. Pratap; B. M. Arora


Publisher
Springer
Year
1989
Tongue
English
Weight
197 KB
Volume
8
Category
Article
ISSN
0261-8028

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Hole trapping in the gate oxide of MOS devices causes instabilities of device parameters and serious reliability problems in MOS transistors and memories. In this work, hole traps, generated by high-field electron injection, are studied in thermal oxides in the thickness range below 10 nm. PMOS tran