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Orientation-defined molecular layer epitaxy of α-Al2O3 thin films

✍ Scribed by T. Maeda; M. Yoshimoto; T. Ohnishi; G.H. Lee; H. Koinuma


Book ID
108342341
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
516 KB
Volume
177
Category
Article
ISSN
0022-0248

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A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i