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Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si

✍ Scribed by Rakhshani, A. E.

Book ID: 126318229
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 947 KB
Volume: 108
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3490622

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