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Electrical Characterization of n-ZnO/p-Si Heterojunction Prepared by Spray Pyrolysis Technique

✍ Scribed by Bedia, F.Z.; Bedia, A.; Benyoucef, B.; Hamzaoui, S.

Book ID
125823972
Publisher
Elsevier
Year
2014
Tongue
English
Weight
431 KB
Volume
55
Category
Article
ISSN
1875-3892

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Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It