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Opto-structural and electrical properties of chemically grown Ga doped MoBi2Se5thin films

โœ Scribed by Patil, S. V.; Mane, R. M.; Pawar, N. B.; Kharade, S. D.; Mali, S. S.; Patil, P. S.; Agawane, G. L.; Kim, J. H.; Bhosale, P. N.

Book ID
121601685
Publisher
Springer US
Year
2013
Tongue
English
Weight
787 KB
Volume
24
Category
Article
ISSN
0957-4522

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Bi 2ร€x Sb x Se 3 thin films were deposited on to the chemomechanically and ultrasonically cleaned glass substrate using APT. Equimolar Bi-TEA, Sb-TEA and Na 2 SeSO 3 were used as basic source materials. UV-visible spectrophotometer (Hitachi model 330, Japan) was used to determine absorption spectra