Growth mechanism and characterisation of chemically grown Sb doped Bi2Se3 thin films

✍ Scribed by N.S. Patil; A.M. Sargar; S.R. Mane; P.N. Bhosale

• Book ID: 104002356
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 768 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.02.084

✦ Synopsis

Bi 2Àx Sb x Se 3 thin films were deposited on to the chemomechanically and ultrasonically cleaned glass substrate using APT. Equimolar Bi-TEA, Sb-TEA and Na 2 SeSO 3 were used as basic source materials.

UV-visible spectrophotometer (Hitachi model 330, Japan) was used to determine absorption spectra of Bi 2Àx Sb x Se 3 in the wavelength range 350-850 nm. The layer thickness of the as deposited samples was measured by gravimetric technique using highly sensitive electronic balance; Mettler Toledo GmbHCH-8606 Greifensee having an accuracy of AE0.01 mg. The absorption coefficient, band gap and type of transition were determined from these studies. X-ray diffraction (XRD) analysis was carried out using a Philips PW-1710 X-ray diffractometer for the 2u ranging from 08 to 1008 with Cu Ka line used as a beam (l = 1.5418A8). Scanning electron microscopy (SEM) and energy dispersive X-ray analysis was performed on a JEOL-JSM-6360A scanning microscope.