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Optimum Cu buffer layer thickness for growth of metal overlayers on Si (111)

✍ Scribed by Pedersen, Kjeld; Kristensen, Thomas B.; Pederser, Thomas G.; Morgen, Per; Li, Zheshen; Hoffman, Søren V.

Book ID
120266745
Publisher
The American Physical Society
Year
2002
Tongue
English
Weight
63 KB
Volume
66
Category
Article
ISSN
1098-0121

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Growth of metallic intermediate layer on
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The structural change of a thin film patch by surface electro-migration is investigated in a computer simulation with use of the lattice gas model. The temperature dependence of the growth velocity of an intermediate layer, AC effect and evaporation effect are studied. The characteristic morphologic