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MOCVD Growth of InN on Si(111) with Various Buffer Layers

✍ Scribed by C.C. Huang; R.W. Chuang; S.J. Chang; J.C. Lin; Y.C. Cheng; W.J. Lin


Book ID
107455203
Publisher
Springer US
Year
2008
Tongue
English
Weight
215 KB
Volume
37
Category
Article
ISSN
0361-5235

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MOCVD Growth and Characterization of GaN
✍ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 169 KB πŸ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality