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Optimized conditions for the formation of buried insulating layers in Si by high dose implantation of oxygen

✍ Scribed by O.W. Holland; D. Fathy; J. Narayan; T.P. Sjoreen; S.R. Wilson

Book ID: 118333198
Publisher: Elsevier Science
Year: 1985
Tongue: English
Weight: 517 KB
Volume: 71
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(85)90285-6

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