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Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy

✍ Scribed by Y.S Chang; S Naritsuka; T Nishinaga

Book ID: 108342762
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 217 KB
Volume: 192
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00407-2

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