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Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxy

✍ Scribed by W. Stolz; Y. Horikoshi; M. Naganuma; K. Nozawa


Book ID
107790282
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
501 KB
Volume
95
Category
Article
ISSN
0022-0248

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