An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrom
Optimization and application of glancing angle Rutherford backscattering spectrometry
β Scribed by Y. Tamminga; M.F.C. Willemsen; R. Van Silfhout
- Publisher
- Elsevier Science
- Year
- 1983
- Weight
- 103 KB
- Volume
- 218
- Category
- Article
- ISSN
- 0167-5087
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γuences ranging from 7.5 Γ 1017 to 1 Γ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc
Cyclotron Rutherford backscattering spectrometry (CRBS), which utilizes the cyclotron motions of scattered ions in a uniform magnetic field, enables us to perform elemental depth profile measurements with an acceptance angle of larger than 10 msr and a relative energy resolution of better than 1%. C