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The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors

✍ Scribed by N.A.G. Ahmed; C.E. Christodoulides; G. Carter; M.J. Nobes; A.I. Titov


Publisher
Elsevier Science
Year
1980
Weight
469 KB
Volume
168
Category
Article
ISSN
0029-554X

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