Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures
✍ Scribed by W. Rudno-rudziński; G. Sęk; K. Ryczko; R. Kudrawiec; J. Misiewicz; A. Somers; R. Schwertberger; J. P. Reithmaier; A. Forchel
- Book ID
- 121758685
- Publisher
- American Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 347 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0003-6951
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## Abstract InAs/GaInAsP quantum dot (QD) structure grown by gas source molecular beam epitaxy on InP (100) substrate and designed as an active region for laser applications at 1.55 μm wavelength range has been investigated by optical spectroscopy in order to probe its energy electronic structure.
The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for t