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Intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures

✍ Scribed by Gebhard, T; Alvarenga, D; Souza, P L; Guimarães, P S S; Unterrainer, K; Pires, M P; Vieira, G S; Boas, J M Villas

Book ID: 120208086
Publisher: Institute of Physics
Year: 2009
Tongue: English
Weight: 731 KB
Volume: 167
Category: Article
ISSN: 1742-6588
DOI: 10.1088/1742-6596/167/1/012001

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## Abstract InAs/GaInAsP quantum dot (QD) structure grown by gas source molecular beam epitaxy on InP (100) substrate and designed as an active region for laser applications at 1.55 μm wavelength range has been investigated by optical spectroscopy in order to probe its energy electronic structure.