Within the framework of effective-mass approximation, exciton states confined in zinc-blende GaN/AlN quantum dot (QD) are investigated by means of a variational approach, including three-dimensional confinement of the electron and hole in the QD and finite band offsets. Numerical results show that t
Quantum size effects on excitons in strained InAs/InP quantum dots
β Scribed by ChangKyoo Yoo; A. John Peter
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 449 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
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π SIMILAR VOLUMES
The spin dynamics in self-organized InAs/GaAs quantum dots have been studied by time-resolved photoluminescence performed under strictly resonant excitation conditions. It is demonstrated that the carrier spins in these nanostructures are totally frozen on the scale of the exciton lifetime.
To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot