๐”– Bobbio Scriptorium
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Optical studies of point defects induced in NaF crystals by ion implantation and X-rays

โœ Scribed by N.N. Kristianpoller; G.S. Blieden; J.D. Comins

Book ID
113282583
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
397 KB
Volume
65
Category
Article
ISSN
0168-583X

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The possibility of making devices which use the high charge carrier mobility of Ge in mainstream semiconductor technology has drawn attention to the very limited understanding of ion implantation damage in germanium and the defect reactions associated with its removal. Results of DLTS and high-resol