The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy

✍ Scribed by Kuo-Hao Lee; Jau-Wern Chiou; Jin-Ming Chen; Jyh-Fu Lee; Alain Braud; Katharina Lorenz; Eduardo Alves; In-Gann Chen

• Book ID: 109263246
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 373 KB
• Volume: 93
• Category: Article
• ISSN: 0002-7820
• DOI: 10.1111/j.1551-2916.2010.04059.x