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Optical Stark effect on excitons in GaAs quantum wells

✍ Scribed by Von Lehmen, A.; Chemla, D. S.; Zucker, J. E.; Heritage, J. P.


Book ID
115416030
Publisher
Optical Society of America
Year
1986
Tongue
English
Weight
420 KB
Volume
11
Category
Article
ISSN
0146-9592

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We calculated the exciton binding energy and energy levels in GaAs=Al0:3Ga0:7As DQWs with non-abrupt interfaces, taking into account the electric and magnetic ΓΏeld e ects. Numerical results for GaAs=Al0:3Ga0:7As double quantum wells show an enhancement of the e-hh exciton energy by as much as 50 meV