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Optical response of Pb quantum wells on Si(111)--Au

✍ Scribed by Viktor Hnatyuk; Mirosław Stróżak

Book ID
108241163
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
608 KB
Volume
372
Category
Article
ISSN
0375-9601

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In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity