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The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates

✍ Scribed by S.C. Su; C.C. Ling; Y.M. Lu; T. Mei; L.Z. Zhao; B. Niu


Book ID
113915645
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
507 KB
Volume
152
Category
Article
ISSN
0038-1098

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GaN on Si(111): From Growth Optimization
✍ F. Semond; B. Damilano; S. VΓ©zian; N. Grandjean; M. Leroux; J. Massies πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 171 KB πŸ‘ 2 views

In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity