Optical study of BxGa1โxAs/GaAs epilayer
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F. Saidi; F. Hassen; H. Maaref; H. Dumont; Y. Monteil
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Article
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2006
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Elsevier Science
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English
โ 168 KB
Optical studies of B x Ga 1รx As/GaAs epilayers grown by Metal Organic Chemical Vapor Deposition (MOCVD), with boron composition 7%, have been achieved by photoluminescence spectroscopy (PL) as a function of the excitation density and the sample temperature (10 -300 K). The Raman scattering have sho