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Electronic structure calculation of Mn-doped GaAs

✍ Scribed by Arnaldo Dal Pino Jr.; Adalberto Fazzio; JoséR. Leite


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
223 KB
Volume
44
Category
Article
ISSN
0038-1098

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Electronic subband of single Siδ-doped G
✍ E Ozturk; Y Ergun; H Sari; I Sokmen 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 324 KB

We have theoretically investigated the subband structure of single Si δ-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the δ-doping concentration, the δ-layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two