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Study of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers

โœ Scribed by A.G. Ryabtsev; E.V. Lutsenko; G.I. Ryabtsev; G.P. Yablonskii; A.S. Smal; B. Schineller; M. Heuken


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
78 KB
Volume
0
Category
Article
ISSN
1862-6351

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Lasing under optical pumping by N 2 -laser radiation in InGaN/GaN multiple quantum well heterostructures grown in AIXTRON MOVPE reactors was achieved and investigated in the wavelength range of 450-470 nm. The laser operation wavelength depends most strongly on V/III ratio during quantum well barrie