We describe photoluminescence measurements made on mesa geometry quantum dots and wires with exposed side walls fabricated by laterally patterning undoped GaAs/A1GaAs quantum wells using electron beam lithography and dry etching. At low temperature the photoluminescence efficiency of many but not al
Optical properties of wire and dot structures for photonic applications
✍ Scribed by H. Schweizer; G. Lehr; F. Prins; G. Mayer; E. Lach; R. Krüger; E. Fröhlich; M.H. Pilkuhn; G.W. Smith
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 861 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0749-6036
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