## Abstract InGaN quantum dots were successfully implemented into fully epitaxially grown nitrideβbased monolithic microcavities (MCs). The discrete modes of airpost pillar MCs prepared out of the planar sample are shown in microreflectivity as well as in microphotoluminescence. These measurements
Optical properties of InGaN quantum dots in monolithic pillar microcavities
β Scribed by Sebald, K.; Seyfried, M.; Kalden, J.; Gutowski, J.; Dartsch, H.; Tessarek, C.; Aschenbrenner, T.; Figge, S.; Kruse, C.; Hommel, D.; Florian, M.; Jahnke, F.
- Book ID
- 121236842
- Publisher
- American Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 549 KB
- Volume
- 96
- Category
- Article
- ISSN
- 0003-6951
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We incorporate the quantum dot picture into analysis of light-matter coupling in GaN microcavities with InGaN quantum wells. We investigate quantitatively the transition from weak to strong coupling regime with the variation of the in-plane density of quantum dots, radiative recombination time of th
## Abstract Nitrideβbased quantum dots have many attractive optical properties for the realization of quantum dot (QD) based devices which will be presented in this contribution. We will analyze the basic characteristics of single InGaN QDs and their electroluminescence (EL) as well as the optical