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Optical properties of In 0.3 Ga 0.7 N/GaN green emission nanorods fabricated by plasma etching

✍ Scribed by Chiu, C H; Lo, M H; Lai, C F; Lu, T C; Huang, H W; Chang, Y A; Hsueh, T H; Yu, C C; Kuo, H C; Wang, S C; Lin, C F; Kuo, Y K

Book ID
120081757
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
526 KB
Volume
18
Category
Article
ISSN
0957-4484

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GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra