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High-quality In0.3Ga0.7N/GaN quantum well growth and their optical and structural properties

✍ Scribed by Cheong, Myung Goo; Suh, E-K; Lee, H J


Book ID
111921157
Publisher
Institute of Physics
Year
2001
Tongue
English
Weight
595 KB
Volume
16
Category
Article
ISSN
0268-1242

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Hole structure of a GaAs-Al 0.3 Ga 0.7 As p-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs we