## Abstract We have investigated intraband absorptions in GaN/AlN QDs for ultrafast allβoptical switching applications at telecommunication wavelengths. Using timeβresolved pumpβprobe experiments the electron lifetime in the excited state of the QDs is measured to be 165βfs. Intraband absorption sa
β¦ LIBER β¦
Optical Properties of GaN Nanostructures for Optoelectronic Applications
β Scribed by Al-Douri, Y.
- Book ID
- 121742162
- Publisher
- Elsevier
- Year
- 2013
- Tongue
- English
- Weight
- 762 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1877-7058
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