GaN/AlGaN nanostructures for intersubband optoelectronics

✍ Scribed by Tchernycheva, M. ;Macchadani, H. ;Nevou, L. ;Mangeney, J. ;Julien, F. H. ;Kandaswamy, P. K. ;Wirthmüller, A. ;Monroy, E. ;Vardi, A. ;Schacham, S. ;Bahir, G.

• Book ID: 105365820
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 328 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983565

✦ Synopsis

Abstract

We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all‐optical switching applications at telecommunication wavelengths. Using time‐resolved pump‐probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17 × 17 µm^2^ size provide a frequency response above 10 GHz at 1.5 µm wavelength.