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Optical properties of fresh dislocations in GaN

✍ Scribed by I. Yonenaga; Y. Ohno; T. Taishi; Y. Tokumoto; H. Makino; T. Yao; Y. Kamimura; K. Edagawa


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
312 KB
Volume
318
Category
Article
ISSN
0022-0248

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A GaN layer was grown by molecular beam epitaxy on a freestanding GaN template prepared by hydride vaporphase epitaxy. Two characteristic areas have been found in the overgrown layer: a region nearly free from dislocations and a region with the density of the edge dislocations of $5 Γ‚ 10 9 cm Γ€2 , a