Optical properties, band gap, and surface roughness of Si3N4
β Scribed by Bauer, J.
- Publisher
- John Wiley and Sons
- Year
- 1977
- Tongue
- English
- Weight
- 540 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Visible photoand electroluminesceuce was found at room temperature in two types of nanocomposite layers SiNx(Si). The first type of layers was obtained by annealing a-Si film.g in nitrogen at 900-950Β°C. The second type of layers was obtained by ion-plasma reactive sputtering of a Si target in a nitr
Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD) and irradiated at GANIL with Pb ions of 110 MeV up to a maximum fluence of 4 Γ 10 13 cm Γ2 . As shown in a previous work these irradiation conditions, characterized by a pre