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Bulk and surface properties of RTCVD Si3N4 films for optical device applications

✍ Scribed by F. Lebland; Z.Z. Wang; J. Flicstein; C. Licoppe; Y.I. Nissim


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
565 KB
Volume
69
Category
Article
ISSN
0169-4332

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Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD) and irradiated at GANIL with Pb ions of 110 MeV up to a maximum fluence of 4 Γ‚ 10 13 cm Γ€2 . As shown in a previous work these irradiation conditions, characterized by a pre