Swelling and optical properties of Si3N4
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B. Canut; A. Ayari; J. Dupuis; M. Lemiti; A. Fave; S. Ramos
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Article
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2009
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Elsevier Science
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English
β 497 KB
Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD) and irradiated at GANIL with Pb ions of 110 MeV up to a maximum fluence of 4 Γ 10 13 cm Γ2 . As shown in a previous work these irradiation conditions, characterized by a pre