Electrical, optical and luminescent properties of Si3N4 films containing Si nanoclusters

✍ Scribed by V.G. Baru; S. Bayliss; A.P. Chernushich; M.I. Elinson; P. Harris; V.A. Jitov; V.I. Pokalyakin; G.V. Stepanov; L.Yu. Zaharov

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 225 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00027-0

✦ Synopsis

Visible photoand electroluminesceuce was found at room temperature in two types of nanocomposite layers SiNx(Si). The first type of layers was obtained by annealing a-Si film.g in nitrogen at 900-950°C. The second type of layers was obtained by ion-plasma reactive sputtering of a Si target in a nitrogen atmosphere. The photo-and eleetrolnminesceuce spectral response, optical transmission and voltage-current characteristics of the SiNx nanocomposite layers have been studied. Structural information has been obtained from electron microscopy. Possible physical mechanisms for the observed effects are disc~sse~