The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing
β¦ LIBER β¦
Optical Properties and Surface Roughness of Ion Implanted Single Crystal Sapphire
β Scribed by Demaree, J. D.; Kirkpatrick, S. R.; Kirkpatrick, A. R.; Hirvonen, J. K.
- Book ID
- 118215518
- Publisher
- Cambridge University Press
- Year
- 1996
- Weight
- 430 KB
- Volume
- 438
- Category
- Article
- ISSN
- 0272-9172
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