Study of Stark effect in AlSb/GaSb/InAs/
β
Y.W. Chen; H.S. Li; K.L. Wang
π
Article
π
1993
π
Elsevier Science
π
English
β 161 KB
A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum