We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show
โฆ LIBER โฆ
Optical investigation of interface roughness and defect incorporation in GaAs/AlGaAs quantum wells grown with and without growth interruption
โ Scribed by Gurioli, M.; Vinattieri, A.; Colocci, M.; Bosacchi, A.; Franchi, S.
- Book ID
- 111691729
- Publisher
- American Institute of Physics
- Year
- 1991
- Tongue
- English
- Weight
- 641 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.106109
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Low-temperature photoluminescence measurements were carried out to assess the changes in the properties of strained GaAs/InGaAs/GaAs multi-quantum-wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without growth interruption at the heterointerfaces. Sharp exci